STD3N65M6 STMicroelectronics
auf Bestellung 2500 Stücke:
Lieferzeit 176-180 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.90 EUR |
| 10+ | 1.56 EUR |
| 100+ | 1.21 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.84 EUR |
| 2500+ | 0.78 EUR |
| 5000+ | 0.75 EUR |
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Technische Details STD3N65M6 STMicroelectronics
Description: MOSFET N-CH 650V DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.75A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 3.75V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 100 V.
Weitere Produktangebote STD3N65M6
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STD3N65M6 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 650V 3.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD3N65M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 3.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD3N65M6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.75A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 3.75V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 100 V |
Produkt ist nicht verfügbar |