Produkte > STMICROELECTRONICS > STD3N80K5
STD3N80K5

STD3N80K5 STMicroelectronics

en.DM00090304.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.32 EUR
Mindestbestellmenge: 2500
Produktrezensionen
Produktbewertung abgeben

Technische Details STD3N80K5 STMicroelectronics

Description: MOSFET N-CH 800V 2.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V.

Weitere Produktangebote STD3N80K5 nach Preis ab 1.4 EUR bis 3.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
STD3N80K5 STD3N80K5 Hersteller : STMicroelectronics en.DM00090304.pdf Description: MOSFET N-CH 800V 2.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
auf Bestellung 4884 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.2 EUR
10+ 2.62 EUR
100+ 2.03 EUR
500+ 1.72 EUR
1000+ 1.4 EUR
Mindestbestellmenge: 9
STD3N80K5 STD3N80K5 Hersteller : STMicroelectronics std3n80k5-1850470.pdf MOSFET N-CH 800V 2.8Ohm typ 2.5A Zener-protecte
auf Bestellung 2500 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.69 EUR
18+ 3.02 EUR
100+ 2.35 EUR
500+ 1.99 EUR
1000+ 1.8 EUR
2500+ 1.53 EUR
5000+ 1.45 EUR
Mindestbestellmenge: 15
STD3N80K5 Hersteller : STMicroelectronics 12076030974746343.pdf Trans MOSFET N-CH 800V 2.5A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD3N80K5 STD3N80K5 Hersteller : STMicroelectronics 12076030974746343.pdf Trans MOSFET N-CH 800V 2.5A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar