STD3N80K5 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 2.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.86 EUR |
| 5000+ | 0.8 EUR |
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Technische Details STD3N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 2.5A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote STD3N80K5 nach Preis ab 0.83 EUR bis 3.06 EUR
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STD3N80K5 | Hersteller : STMicroelectronics |
MOSFETs N-CH 800V 2.8Ohm typ 2.5A Zener-protecte |
auf Bestellung 2484 Stücke: Lieferzeit 10-14 Tag (e) |
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STD3N80K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 2.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 1A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 100 V |
auf Bestellung 5366 Stücke: Lieferzeit 10-14 Tag (e) |
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