STD3NK50Z-1 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 500V 2.3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
auf Bestellung 4290 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 1.92 EUR |
| 16+ | 1.69 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.82 EUR |
| 2000+ | 0.74 EUR |
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Technische Details STD3NK50Z-1 STMicroelectronics
Description: MOSFET N-CH 500V 2.3A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc), Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.15A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: I-PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V.
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Trans MOSFET N-CH 500V 2.3A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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| STD3NK50Z-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 500V 2.3A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |