Technische Details STD3NK90ZT4
- MOSFET N CH 900V 3A DPAK
- Transistor Polarity:N Channel
- On State Resistance:4.1ohm
- Operating Temperature Range:-55`C to +150`C
- Case Style:DPAK
- Cont Current Id:1.5A
- Termination Type:SMD
- Transistor Type:Power MOSFET
- Typ Voltage Vds:900V
- Typ Voltage Vgs th:3.75V
- Voltage Vgs Rds on Measurement:10V
Weitere Produktangebote STD3NK90ZT4 nach Preis ab 0.87 EUR bis 4.59 EUR
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STD3NK90ZT4 | Hersteller : STMicroelectronics |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 3A; 12W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 3A Power dissipation: 12W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 5470 Stücke: Lieferzeit 14-21 Tag (e) |
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STD3NK90ZT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 900V 3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 22.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V |
auf Bestellung 342 Stücke: Lieferzeit 10-14 Tag (e) |
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STD3NK90ZT4 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 900 Volt 3.0Amp Zener SuperMESH |
auf Bestellung 1474 Stücke: Lieferzeit 10-14 Tag (e) |
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| STD3NK90ZT4 | Hersteller : STMicroelectronics |
N-канальний ПТ, Udss, В = 900, Id = 3 А, Ciss, пФ @ Uds, В = 590 @ 25, Qg, нКл = 22,7 @ 10 В, Rds = 4.8 Ом @ 1,5 A, 10 В, Ugs(th) = 4,5 В @ 50 мкА, Р, Вт = 90, Тексп, °C = -55...+150, Тип монт. = smd,... Група товару: Транзистори Корпус: DPAK Од. вим: шт Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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STD3NK90ZT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 900V 3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 22.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V |
Produkt ist nicht verfügbar |