Technische Details STD3NK90ZT4
- MOSFET N CH 900V 3A DPAK
- Transistor Polarity:N Channel
- On State Resistance:4.1ohm
- Operating Temperature Range:-55`C to +150`C
- Case Style:DPAK
- Cont Current Id:1.5A
- Termination Type:SMD
- Transistor Type:Power MOSFET
- Typ Voltage Vds:900V
- Typ Voltage Vgs th:3.75V
- Voltage Vgs Rds on Measurement:10V
Weitere Produktangebote STD3NK90ZT4 nach Preis ab 1.07 EUR bis 5.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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STD3NK90ZT4 | STMicroelectronics |
  Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 3A; 12W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 3A Power dissipation: 12W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 5470 Stücke: Lieferzeit 14-21 Tag (e) |
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STD3NK90ZT4 | STMicroelectronics |
Description: MOSFET N-CH 900V 3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 22.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V |
auf Bestellung 342 Stücke: Lieferzeit 10-14 Tag (e) |
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STD3NK90ZT4 | STMicroelectronics |
MOSFETs N-Ch 900 Volt 3.0Amp Zener SuperMESH |
auf Bestellung 1416 Stücke: Lieferzeit 10-14 Tag (e) |
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| STD3NK90ZT4 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3A; 12W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3A
Power dissipation: 12W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3A; 12W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3A
Power dissipation: 12W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 5470 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 3.68 EUR |
| 31+ | 2.76 EUR |
| 36+ | 2.42 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.31 EUR |
| 1000+ | 1.23 EUR |
| 2500+ | 1.12 EUR |
| 5000+ | 1.07 EUR |
| STD3NK90ZT4 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 22.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
Description: MOSFET N-CH 900V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 22.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 25 V
auf Bestellung 342 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.4 EUR |
| 10+ | 3.49 EUR |
| 100+ | 2.4 EUR |
| STD3NK90ZT4 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 900 Volt 3.0Amp Zener SuperMESH
MOSFETs N-Ch 900 Volt 3.0Amp Zener SuperMESH
auf Bestellung 1416 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.46 EUR |
| 10+ | 3.53 EUR |
| 100+ | 2.43 EUR |
| 500+ | 2 EUR |
| 1000+ | 1.87 EUR |
| 2500+ | 1.76 EUR |