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STD4LN80K5 STMicroelectronics

Name: STD4LN80K5
Brand: STMicroelectronics
SKU: 145095-4
Price: 1.57 EUR
Availability: InStock

Hersteller: STMicroelectronics
MOSFET N-channel 800 V, 2.1 Ohm typ 3 A MDmesh K5 Power MOSFET

auf Bestellung 2208 Stücke:

Lieferzeit 14-28 Tag (e)

Anzahl	Preis ohne MwSt
19+	2.78 EUR
22+	2.41 EUR
100+	2.02 EUR
500+	1.85 EUR
1000+	1.67 EUR
2500+	1.64 EUR
5000+	1.57 EUR

Mindestbestellmenge: 19

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Technische Details STD4LN80K5 STMicroelectronics

Description: MOSFET N-CHANNEL 800V 3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 100 V.

Weitere Produktangebote STD4LN80K5

Foto	Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit	Preis ohne MwSt
	STD4LN80K5	Hersteller : STMicroelectronics	Description: MOSFET N-CHANNEL 800V 3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 100 V	Produkt ist nicht verfügbar
	STD4LN80K5	Hersteller : STMicroelectronics	Description: MOSFET N-CHANNEL 800V 3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 100 V	Produkt ist nicht verfügbar