STD4N62K3

STD4N62K3 STMicroelectronics


en.CD00294255.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 620V 3.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 1.9A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 50 V
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.24 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details STD4N62K3 STMicroelectronics

Description: MOSFET N-CH 620V 3.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 1.95Ohm @ 1.9A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 50 V.

Weitere Produktangebote STD4N62K3 nach Preis ab 1.29 EUR bis 3.47 EUR

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STD4N62K3 STD4N62K3 Hersteller : STMicroelectronics std4n62k3-1850522.pdf MOSFETs N-Ch 620V 1.8 ohm 3.8 A SuperMESH3
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.26 EUR
10+2.43 EUR
100+1.74 EUR
500+1.42 EUR
1000+1.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD4N62K3 STD4N62K3 Hersteller : STMicroelectronics en.CD00294255.pdf Description: MOSFET N-CH 620V 3.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 1.9A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 50 V
auf Bestellung 4990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.47 EUR
10+2.37 EUR
100+1.69 EUR
500+1.39 EUR
1000+1.29 EUR
Mindestbestellmenge: 6
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STD4N62K3 STD4N62K3 Hersteller : STMicroelectronics 1511677776515539cd002.pdf Trans MOSFET N-CH 620V 3.8A 3-Pin(2+Tab) DPAK T/R
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STD4N62K3 Hersteller : STMicroelectronics 1511677776515539cd002.pdf Trans MOSFET N-CH 620V 3.8A 3-Pin(2+Tab) DPAK T/R
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STD4N62K3 Hersteller : STMicroelectronics en.CD00294255.pdf STD4N62K3 SMD N channel transistors
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