STD4N90K5

STD4N90K5 STMicroelectronics


en.DM00339980.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 900V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 173 pF @ 100 V
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.15 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details STD4N90K5 STMicroelectronics

Description: MOSFET N-CH 900V 3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 173 pF @ 100 V.

Weitere Produktangebote STD4N90K5 nach Preis ab 1.18 EUR bis 2.83 EUR

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STD4N90K5 STD4N90K5 Hersteller : STMicroelectronics en.DM00339980.pdf Description: MOSFET N-CH 900V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 1A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 173 pF @ 100 V
auf Bestellung 4279 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.80 EUR
10+2.30 EUR
100+1.72 EUR
500+1.37 EUR
1000+1.35 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
STD4N90K5 STD4N90K5 Hersteller : STMicroelectronics std4n90k5-1850407.pdf MOSFETs N-channel 900 V, 1.90 Ohm typ 3 A MDmesh K5 Power MOSFET
auf Bestellung 4266 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.83 EUR
10+2.32 EUR
100+1.78 EUR
250+1.71 EUR
500+1.41 EUR
1000+1.28 EUR
2500+1.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STD4N90K5 STD4N90K5 Hersteller : STMicroelectronics dm00339.pdf Trans MOSFET N-CH 900V 3A 3-Pin(2+Tab) DPAK T/R
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STD4N90K5 Hersteller : STMicroelectronics dm00339.pdf Trans MOSFET N-CH 900V 3A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
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STD4N90K5 Hersteller : STMicroelectronics en.DM00339980.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3A; Idm: 12A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3A
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 12A
Power dissipation: 60W
Gate charge: 5.3nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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STD4N90K5 Hersteller : STMicroelectronics en.DM00339980.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 3A; Idm: 12A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 3A
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 12A
Power dissipation: 60W
Gate charge: 5.3nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH