STD4NK100Z STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 1000V 2.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1963 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 4.01 EUR |
| 10+ | 3.33 EUR |
| 100+ | 2.65 EUR |
| 500+ | 2.24 EUR |
| 1000+ | 1.9 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STD4NK100Z STMicroelectronics
Description: MOSFET N-CH 1000V 2.2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: DPAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote STD4NK100Z nach Preis ab 2.65 EUR bis 5.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STD4NK100Z | Hersteller : STMicroelectronics |
MOSFET Automotive-grade N-channel 1000 V, 5.6 Ohm typ 2.2 A SuperMESH Power MOSFET |
auf Bestellung 10950 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
| STD4NK100Z | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 1A; Idm: 8.8A; 90W; DPAK Mounting: SMD Case: DPAK Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 8.8A Drain-source voltage: 1kV Drain current: 1A On-state resistance: 6.8Ω Type of transistor: N-MOSFET Power dissipation: 90W Polarisation: unipolar Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
|
|
STD4NK100Z | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 1000V 2.2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 6.8Ohm @ 1.1A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
|||||||||||||||||
| STD4NK100Z | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1000V; 1A; Idm: 8.8A; 90W; DPAK Mounting: SMD Case: DPAK Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 8.8A Drain-source voltage: 1kV Drain current: 1A On-state resistance: 6.8Ω Type of transistor: N-MOSFET Power dissipation: 90W Polarisation: unipolar |
Produkt ist nicht verfügbar |