STD5N60DM2 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 600V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 1.75A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 100 V
auf Bestellung 2280 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 2 EUR |
| 16+ | 1.64 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 0.88 EUR |
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Technische Details STD5N60DM2 STMicroelectronics
Description: MOSFET N-CH 600V 3.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), Rds On (Max) @ Id, Vgs: 1.55Ohm @ 1.75A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 100 V.
Weitere Produktangebote STD5N60DM2 nach Preis ab 0.87 EUR bis 2.2 EUR
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STD5N60DM2 | Hersteller : STMicroelectronics |
MOSFET N-channel 600 V, 1.38 Ohm typ 3.5 A MDmesh DM2 Power MOSFET |
auf Bestellung 2357 Stücke: Lieferzeit 14-28 Tag (e) |
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STD5N60DM2 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STD5N60DM2 - Leistungs-MOSFET, n-Kanal, 600 V, 3.5 A, 1.38 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 3.5A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 45W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.38ohm |
auf Bestellung 2698 Stücke: Lieferzeit 14-21 Tag (e) |
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STD5N60DM2 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STD5N60DM2 - Leistungs-MOSFET, n-Kanal, 600 V, 3.5 A, 1.38 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 3.5A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 45W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.38ohm |
auf Bestellung 2698 Stücke: Lieferzeit 14-21 Tag (e) |
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STD5N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 3.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| STD5N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 3.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD5N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 3.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD5N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 3.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD5N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 3.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD5N60DM2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 3.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| STD5N60DM2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 14A; 45W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.55Ω Mounting: SMD Gate charge: 5.3nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD5N60DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 3.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 1.55Ohm @ 1.75A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STD5N60DM2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 14A; 45W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 45W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1.55Ω Mounting: SMD Gate charge: 5.3nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |