STD5N60M2

STD5N60M2 STMicroelectronics


en.DM00096400.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 100 V
auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.16 EUR
Mindestbestellmenge: 2500
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Technische Details STD5N60M2 STMicroelectronics

Description: MOSFET N-CH 600V 3.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 100 V.

Weitere Produktangebote STD5N60M2 nach Preis ab 1.22 EUR bis 3.85 EUR

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STD5N60M2 STD5N60M2 Hersteller : STMicroelectronics en.DM00096400.pdf Description: MOSFET N-CH 600V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.55 EUR
10+ 2.13 EUR
100+ 1.69 EUR
500+ 1.43 EUR
1000+ 1.22 EUR
Mindestbestellmenge: 7
STD5N60M2 STD5N60M2 Hersteller : STMicroelectronics std5n60m2-1850473.pdf MOSFET N-channel 600 V, 1.3 Ohm typ 3.5 A MDmesh M2 Power MOSFET in DPAK package
auf Bestellung 727 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.85 EUR
17+ 3.22 EUR
100+ 2.56 EUR
250+ 2.35 EUR
500+ 2.13 EUR
1000+ 1.83 EUR
2500+ 1.74 EUR
Mindestbestellmenge: 14
STD5N60M2 STD5N60M2 Hersteller : STMicroelectronics std5n60m2.pdf Trans MOSFET N-CH 650V 3.5A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD5N60M2 STD5N60M2 Hersteller : STMicroelectronics std5n60m2.pdf Trans MOSFET N-CH 650V 3.5A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD5N60M2 Hersteller : STMicroelectronics std5n60m2.pdf Trans MOSFET N-CH 650V 3.5A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD5N60M2 STD5N60M2 Hersteller : STMicroelectronics std5n60m2.pdf Trans MOSFET N-CH 650V 3.5A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar