STD5N60M2 STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs N-channel 600 V, 1.3 Ohm typ., 3.5 A MDmesh M2 Power MOSFET in DPAK package
auf Bestellung 4130 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.66 EUR |
| 10+ | 1.68 EUR |
| 100+ | 1.12 EUR |
| 500+ | 0.92 EUR |
| 1000+ | 0.81 EUR |
| 2500+ | 0.73 EUR |
| 5000+ | 0.66 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STD5N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 3.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 100 V.
Weitere Produktangebote STD5N60M2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
STD5N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 3.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|
 |
STD5N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 3.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|
| STD5N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 3.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
||
|
|
STD5N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 3.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|
 |
STD5N60M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 3.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 100 V |
Produkt ist nicht verfügbar |
|
|
|
STD5N60M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 3.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 100 V |
Produkt ist nicht verfügbar |