STD5N65M6 STMicroelectronics

Description: MOSFET N-CH 650V DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 2A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 3.75V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 0V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 100 V.