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STD5N95K3 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 950V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.77 EUR |
| 100+ | 3.93 EUR |
| 500+ | 3.33 EUR |
| 1000+ | 2.82 EUR |
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Technische Details STD5N95K3 STMicroelectronics
Description: MOSFET N-CH 950V 4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V.
Weitere Produktangebote STD5N95K3 nach Preis ab 3.33 EUR bis 7.2 EUR
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STD5N95K3 | Hersteller : STMicroelectronics |
MOSFET 950 VDSS <3.5 RDS 4A ID 90W Pw |
auf Bestellung 7300 Stücke: Lieferzeit 698-712 Tag (e) |
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STD5N95K3 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STD5N95K3 - Leistungs-MOSFET, n-Kanal, 950 V, 4 A, 3 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 950V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 90W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3ohm |
auf Bestellung 4569 Stücke: Lieferzeit 14-21 Tag (e) |
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STD5N95K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 950V 4A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STD5N95K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 950V 4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| STD5N95K3 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 950V; 3A; Idm: 16A; 90W Mounting: SMD Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced Technology: SuperMESH3™ Power dissipation: 90W Pulsed drain current: 16A Type of transistor: N-MOSFET Gate-source voltage: ±30V Drain-source voltage: 950V Drain current: 3A On-state resistance: 3500mΩ Case: DPAK |
Produkt ist nicht verfügbar |
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STD5N95K3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 950V 4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 2A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 25 V |
Produkt ist nicht verfügbar |
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| STD5N95K3 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SuperMESH3™; unipolar; 950V; 3A; Idm: 16A; 90W Mounting: SMD Features of semiconductor devices: ESD protected gate Polarisation: unipolar Kind of channel: enhanced Technology: SuperMESH3™ Power dissipation: 90W Pulsed drain current: 16A Type of transistor: N-MOSFET Gate-source voltage: ±30V Drain-source voltage: 950V Drain current: 3A On-state resistance: 3500mΩ Case: DPAK |
Produkt ist nicht verfügbar |