Technische Details STD5NK50Z-1 ST
Description: MOSFET N-CH 500V 4.4A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: IPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V.
Weitere Produktangebote STD5NK50Z-1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| STD5NK50Z-1 | Hersteller : ST |
 08+ SOP16 |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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| STD5NK50Z-1 | Hersteller : STM |
SOT-252 |
auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
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STD5NK50Z-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 500V 4.4A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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STD5NK50Z-1 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 500V 4.4A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: IPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 25 V |
Produkt ist nicht verfügbar |