STD5NM60-1 STMicroelectronics
Hersteller: STMicroelectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; Idm: 20A; 96W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.1A
Pulsed drain current: 20A
Power dissipation: 96W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 4.76 EUR |
| 16+ | 4.46 EUR |
| 25+ | 2.86 EUR |
| 43+ | 1.66 EUR |
| 150+ | 0.97 EUR |
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Technische Details STD5NM60-1 STMicroelectronics
Description: MOSFET N-CH 600V 5A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: I-PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V.
Weitere Produktangebote STD5NM60-1 nach Preis ab 2.81 EUR bis 6.4 EUR
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STD5NM60-1 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; Idm: 20A; 96W; IPAK Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.1A Pulsed drain current: 20A Power dissipation: 96W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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STD5NM60-1 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 5A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: I-PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
auf Bestellung 77 Stücke: Lieferzeit 10-14 Tag (e) |
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STD5NM60-1 | Hersteller : STMicroelectronics |
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auf Bestellung 2077 Stücke: Lieferzeit 14-28 Tag (e) |
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STD5NM60-1 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) IPAK Tube |
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