STD5NM60T4 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 2500+ | 1.49 EUR |
| 5000+ | 1.4 EUR |
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Technische Details STD5NM60T4 STMicroelectronics
Description: MOSFET N-CH 600V 5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V, Power Dissipation (Max): 96W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V.
Weitere Produktangebote STD5NM60T4 nach Preis ab 1.61 EUR bis 4.88 EUR
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STD5NM60T4 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 600 Volt 5 Amp |
auf Bestellung 1825 Stücke: Lieferzeit 10-14 Tag (e) |
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STD5NM60T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 2.5A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V |
auf Bestellung 6788 Stücke: Lieferzeit 10-14 Tag (e) |
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| STD5NM60T4 | Hersteller : ST |
Transistor N-Channel MOSFET; 650V; 30V; 1Ohm; 5A; 96W; -55°C ~ 150°C; STD5NM60T4 TSTD5NM60t4 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 85 Stücke: Lieferzeit 7-14 Tag (e) |
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| STD5NM60T4 | Hersteller : STMicroelectronics |
N-канальний ПТ, Udss, В = 600, Id = 5 А, Ciss, пФ @ Uds, В = 400 @ 25, Qg, нКл = 18 @ 10 В, Rds = 1 Ом @ 2,5 А, 10 В, Ugs(th) = 5 В @ 250 мкА, Р, Вт = 96, Тексп, °C = -55...+150, Тип монт. = smd,... Група товару: Транзистори Корпус: DPAK-3 Од. вим: шт Anzahl je Verpackung: 2500 Stücke |
verfügbar 275 Stücke: |
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| STD5NM60T4 | Hersteller : STM |
MOSFET N-CH 600V 5A DPAK Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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STD5NM60T4 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.1A Power dissipation: 96W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |