STD60NF55LAT4 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 55V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.78 EUR |
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Technische Details STD60NF55LAT4 STMicroelectronics
Description: MOSFET N-CH 55V 60A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote STD60NF55LAT4 nach Preis ab 1.86 EUR bis 4.13 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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STD60NF55LAT4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 55V 60A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 4858 Stücke: Lieferzeit 21-28 Tag (e) |
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STD60NF55LAT4 | Hersteller : STMicroelectronics | MOSFET N-channel 55 V, 12 mOhm, 60 A STripFET II Power MOSFET |
auf Bestellung 5 Stücke: Lieferzeit 14-28 Tag (e) |
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STD60NF55LAT4 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STD60NF55LAT4 - Leistungs-MOSFET, n-Kanal, 55 V, 60 A, 0.012 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 110W Anzahl der Pins: 3Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.012ohm |
auf Bestellung 4906 Stücke: Lieferzeit 14-21 Tag (e) |
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STD60NF55LAT4 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STD60NF55LAT4 - Leistungs-MOSFET, n-Kanal, 55 V, 60 A, 0.012 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 60A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 110W Anzahl der Pins: 3Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.012ohm |
auf Bestellung 4906 Stücke: Lieferzeit 14-21 Tag (e) |
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STD60NF55LAT4 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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STD60NF55LAT4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 55V 60A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD60NF55LAT4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 55V 60A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD60NF55LAT4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 55V 60A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD60NF55LAT4 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 55V 60A Automotive 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |