STD6N60M2 STMicroelectronics
auf Bestellung 2328 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.38 EUR |
| 10+ | 2.16 EUR |
| 100+ | 1.50 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.06 EUR |
| 2500+ | 0.93 EUR |
| 5000+ | 0.90 EUR |
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Technische Details STD6N60M2 STMicroelectronics
Description: MOSFET N-CH 600V 4.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V.
Weitere Produktangebote STD6N60M2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STD6N60M2 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 12500 Stücke: Lieferzeit 14-21 Tag (e) |
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| STD6N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| STD6N60M2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2.9A; Idm: 18A; 60W; DPAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.9A Pulsed drain current: 18A Power dissipation: 60W Case: DPAK Gate-source voltage: ±25V On-state resistance: 1.2Ω Mounting: SMD Kind of channel: enhancement Version: ESD Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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STD6N60M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 4.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V |
Produkt ist nicht verfügbar |
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STD6N60M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 4.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.25A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 232 pF @ 100 V |
Produkt ist nicht verfügbar |
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| STD6N60M2 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2.9A; Idm: 18A; 60W; DPAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.9A Pulsed drain current: 18A Power dissipation: 60W Case: DPAK Gate-source voltage: ±25V On-state resistance: 1.2Ω Mounting: SMD Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |