Weitere Produktangebote STD6NF10T4 nach Preis ab 0.51 EUR bis 2.68 EUR
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STD6NF10T4 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 100V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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STD6NF10T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 6A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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STD6NF10T4 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 100 Volt 6 Amp |
auf Bestellung 329 Stücke: Lieferzeit 10-14 Tag (e) |
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STD6NF10T4 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| STD6NF10T4 | Hersteller : STM |
N-channel 100V - 0.22. - 6A - DPAK/IPAK Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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STD6NF10T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 3A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
Produkt ist nicht verfügbar |
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STD6NF10T4 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 3A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V |
Produkt ist nicht verfügbar |