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STD70N02L-1


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Technische Details STD70N02L-1

Description: MOSFET N-CH 25V 60A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: I-PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 16 V.

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STD70N02L-1 STD70N02L-1 Hersteller : STMicroelectronics en.CD00067209.pdf Description: MOSFET N-CH 25V 60A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: I-PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 16 V
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STD70N02L-1 STD70N02L-1 Hersteller : STMicroelectronics stmicroelectronics_cd00067209-1205629.pdf MOSFET N-Ch, 25V-0.0068ohms 60A
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