auf Bestellung 2479 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 4.06 EUR |
| 15+ | 3.64 EUR |
| 100+ | 2.86 EUR |
| 500+ | 2.34 EUR |
| 1000+ | 1.85 EUR |
| 2500+ | 1.52 EUR |
| 5000+ | 1.51 EUR |
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Technische Details STD7N52K3 STMicroelectronics
Description: MOSFET N-CH 525V 6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 525 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V.
Weitere Produktangebote STD7N52K3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STD7N52K3 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 525V 6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| STD7N52K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 525V 6A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD7N52K3 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 525V; 3.8A; 90W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 525V Drain current: 3.8A Power dissipation: 90W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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STD7N52K3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 525V 6A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V |
Produkt ist nicht verfügbar |
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STD7N52K3 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 525V 6A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 3.1A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 737 pF @ 100 V |
Produkt ist nicht verfügbar |
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STD7N52K3 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 525V; 3.8A; 90W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 525V Drain current: 3.8A Power dissipation: 90W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |