STD7N65M6 STMicroelectronics
auf Bestellung 395 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.62 EUR |
| 100+ | 2.59 EUR |
| 500+ | 1.62 EUR |
| 1000+ | 1.39 EUR |
| 2500+ | 1.15 EUR |
| 5000+ | 1.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STD7N65M6 STMicroelectronics
Description: MOSFET N-CH 650V 5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 990mOhm @ 2.5A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 3.75V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V.
Weitere Produktangebote STD7N65M6
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
STD7N65M6 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 650V 5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|
 |
STD7N65M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|
| STD7N65M6 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 650V 5A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
||
 |
STD7N65M6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 990mOhm @ 2.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.75V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V |
Produkt ist nicht verfügbar |
|
|
|
STD7N65M6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 990mOhm @ 2.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.75V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 100 V |
Produkt ist nicht verfügbar |