STD7NM50N-1

STD7NM50N-1 STMicroelectronics


STD7NM50N_-1_STF_P7NM50N_Rev_1.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 500V 5A IPAK
Part Status: Obsolete
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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Technische Details STD7NM50N-1 STMicroelectronics

Description: MOSFET N-CH 500V 5A IPAK, Part Status: Obsolete, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.

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STD7NM50N-1 STD7NM50N-1 Hersteller : STMicroelectronics en.CD00156779-1220588.pdf MOSFET N Ch 500V 0.70 5A
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