Produkte > STD > STD7NM50N

STD7NM50N


STD7NM50N_-1_STF_P7NM50N_Rev_1.pdf Hersteller:

auf Bestellung 8000 Stücke:

Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details STD7NM50N

Description: MOSFET N-CH 500V 5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V.

Weitere Produktangebote STD7NM50N

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
STD7NM50N STD7NM50N Hersteller : STMicroelectronics STD7NM50N_-1_STF_P7NM50N_Rev_1.pdf Description: MOSFET N-CH 500V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
Produkt ist nicht verfügbar
STD7NM50N STD7NM50N Hersteller : STMicroelectronics en.CD00156779-1220588.pdf MOSFET N Ch 500V 0.70 5A Power MDmesh
Produkt ist nicht verfügbar