STD80N10F7 STMicroelectronics
auf Bestellung 17500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.00 EUR |
| 5000+ | 0.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STD80N10F7 STMicroelectronics
Description: MOSFET N-CH 100V 70A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V.
Weitere Produktangebote STD80N10F7 nach Preis ab 0.94 EUR bis 4.17 EUR
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STD80N10F7 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 17500 Stücke: Lieferzeit 14-21 Tag (e) |
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STD80N10F7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 986 Stücke: Lieferzeit 14-21 Tag (e) |
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STD80N10F7 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 100V 0.0085Ohm typ 70A STripFET VII |
auf Bestellung 4578 Stücke: Lieferzeit 10-14 Tag (e) |
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STD80N10F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 70A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V |
auf Bestellung 1087 Stücke: Lieferzeit 10-14 Tag (e) |
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STD80N10F7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| STD80N10F7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD80N10F7 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| STD80N10F7 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 85W; DPAK Type of transistor: N-MOSFET Case: DPAK Drain-source voltage: 100V Drain current: 70A On-state resistance: 10mΩ Power dissipation: 85W Polarisation: unipolar Kind of package: reel; tape Gate charge: 45nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 280A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD80N10F7 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 100V 70A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V |
Produkt ist nicht verfügbar |
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| STD80N10F7 | Hersteller : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 70A; Idm: 280A; 85W; DPAK Type of transistor: N-MOSFET Case: DPAK Drain-source voltage: 100V Drain current: 70A On-state resistance: 10mΩ Power dissipation: 85W Polarisation: unipolar Kind of package: reel; tape Gate charge: 45nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 280A Mounting: SMD |
Produkt ist nicht verfügbar |