STD9N40M2

STD9N40M2 STMicroelectronics


en.DM00104249.pdf Hersteller: STMicroelectronics
MOSFETs N-channel 400 V, 0.59 Ohm typ., 6 A MDmesh M2 Power MOSFET in a DPAK package
auf Bestellung 2205 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.22 EUR
10+1.42 EUR
100+0.98 EUR
500+0.77 EUR
1000+0.7 EUR
2500+0.62 EUR
5000+0.57 EUR
Mindestbestellmenge: 2
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Technische Details STD9N40M2 STMicroelectronics

Description: MOSFET N-CH 400V 6A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 3A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 400 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V.

Weitere Produktangebote STD9N40M2 nach Preis ab 0.69 EUR bis 2.25 EUR

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STD9N40M2 STD9N40M2 Hersteller : STMicroelectronics en.DM00104249.pdf Description: MOSFET N-CH 400V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
auf Bestellung 2458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.25 EUR
13+1.44 EUR
100+0.97 EUR
500+0.76 EUR
1000+0.69 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
STD9N40M2 Hersteller : STMicroelectronics en.dm00104249.pdf Trans MOSFET N-CH 400V 6A 3-Pin(2+Tab) DPAK T/R
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STD9N40M2 STD9N40M2 Hersteller : STMicroelectronics en.dm00104249.pdf Trans MOSFET N-CH 400V 6A 3-Pin(2+Tab) DPAK T/R
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STD9N40M2 STD9N40M2 Hersteller : STMicroelectronics en.DM00104249.pdf Description: MOSFET N-CH 400V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
Produkt ist nicht verfügbar
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STD9N40M2 Hersteller : STMicroelectronics en.DM00104249.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6A; Idm: 24A; 60W; DPAK
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 8.8nC
On-state resistance: 0.8Ω
Drain current: 6A
Pulsed drain current: 24A
Gate-source voltage: ±25V
Power dissipation: 60W
Drain-source voltage: 400V
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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