STD9N60M6 STMicroelectronics
Hersteller: STMicroelectronics
Description: DISCRETE
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3A, 10V
Power Dissipation (Max): 76W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 273 pF @ 100 V
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Technische Details STD9N60M6 STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 3A, 10V, Power Dissipation (Max): 76W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 273 pF @ 100 V.
Weitere Produktangebote STD9N60M6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| STD9N60M6 | STMicroelectronics |
MOSFETs N-channel 600 V, 670 mOhm typ., 6 A MDmesh M6 Power MOSFET in a DPAK package |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| STD9N60M6 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 13.4A; 76W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Power dissipation: 76W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.75Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 13.4A Gate charge: 10nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STD9N60M6 |
|
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 670 mOhm typ., 6 A MDmesh M6 Power MOSFET in a DPAK package
MOSFETs N-channel 600 V, 670 mOhm typ., 6 A MDmesh M6 Power MOSFET in a DPAK package
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STD9N60M6 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 13.4A; 76W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 76W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 13.4A
Gate charge: 10nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 13.4A; 76W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 76W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.75Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 13.4A
Gate charge: 10nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH