STD9N65DM6AG STMicroelectronics

MOSFETs Automotive-grade N-channel 650 V, 365 mOhm typ 9 A MDmesh DM6 Power MOSFET in DP
auf Bestellung 2215 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 3.73 EUR |
10+ | 3.10 EUR |
100+ | 2.46 EUR |
250+ | 2.27 EUR |
500+ | 2.06 EUR |
1000+ | 1.99 EUR |
2500+ | 1.67 EUR |
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Technische Details STD9N65DM6AG STMicroelectronics
Description: DISCRETE, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 4.5A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-252 (DPAK), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote STD9N65DM6AG
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STD9N65DM6AG | Hersteller : STMicroelectronics |
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STD9N65DM6AG | Hersteller : STMicroelectronics | STD9N65DM6AG SMD N channel transistors |
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STD9N65DM6AG | Hersteller : STMicroelectronics |
Description: DISCRETE Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 4.5A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 100 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |