STD9N65DM6AG STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 650 V, 365 mOhm typ., 9 A MDmesh DM6 Power MOSFET in
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.46 EUR |
| 10+ | 3.19 EUR |
| 100+ | 2.45 EUR |
| 500+ | 1.98 EUR |
| 1000+ | 1.96 EUR |
| 2500+ | 1.76 EUR |
| 5000+ | 1.73 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details STD9N65DM6AG STMicroelectronics
Description: DISCRETE, Power Dissipation (Max): 89W (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252 (DPAK), Vgs(th) (Max) @ Id: 4.75V @ 250µA.
Weitere Produktangebote STD9N65DM6AG
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
STD9N65DM6AG | STMicroelectronics |
Description: DISCRETE Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252 (DPAK) Vgs(th) (Max) @ Id: 4.75V @ 250µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
STD9N65DM6AG | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 28A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 89W Case: DPAK Gate-source voltage: ±25V On-state resistance: 440mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 11.7nC Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STD9N65DM6AG |
|
Hersteller: STMicroelectronics
Description: DISCRETE
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Description: DISCRETE
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.7 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STD9N65DM6AG |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 28A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 440mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 11.7nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9A; Idm: 28A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 440mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 11.7nC
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH