Technische Details STE139N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 130A ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 65A, 10V, Power Dissipation (Max): 672W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: ISOTOP, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 363 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 100 V.
Weitere Produktangebote STE139N65M5
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STE139N65M5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 710V 130A 4-Pin ISOTOP Tube |
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STE139N65M5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 130A ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 65A, 10V Power Dissipation (Max): 672W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: ISOTOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 363 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 100 V |
Produkt ist nicht verfügbar |