STE145N65M5 STMicroelectronics
Hersteller: STMicroelectronics
MOSFET Modules N-channel 650 V, 0.012 Ohm typ., 143 A MDmesh M5 Power MOSFET in an ISOTOP packa
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Technische Details STE145N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 143A ISOTOP, Packaging: Tube, Package / Case: ISOTOP, Mounting Type: Chassis Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 143A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 69A, 10V, Power Dissipation (Max): 679W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: ISOTOP®, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 414 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 100 V.
Weitere Produktangebote STE145N65M5
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STE145N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 143A ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 143A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 69A, 10V Power Dissipation (Max): 679W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: ISOTOP® Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 414 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
STE145N65M5 | STMicroelectronics |
Category: Transistor modules MOSFET Description: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W Polarisation: unipolar On-state resistance: 12mΩ Gate-source voltage: ±25V Drain current: 90A Pulsed drain current: 572A Power dissipation: 679W Drain-source voltage: 650V Kind of package: tube Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Case: ISOTOP Technology: MDmesh™; MESH OVERLAY™; PowerMesh™ Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STE145N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 143A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 69A, 10V
Power Dissipation (Max): 679W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 414 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 100 V
Description: MOSFET N-CH 650V 143A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 143A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 69A, 10V
Power Dissipation (Max): 679W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: ISOTOP®
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 414 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18500 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STE145N65M5 |
|
Hersteller: STMicroelectronics
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W
Polarisation: unipolar
On-state resistance: 12mΩ
Gate-source voltage: ±25V
Drain current: 90A
Pulsed drain current: 572A
Power dissipation: 679W
Drain-source voltage: 650V
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Case: ISOTOP
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 650V; 90A; ISOTOP; screw; Idm: 572A; 679W
Polarisation: unipolar
On-state resistance: 12mΩ
Gate-source voltage: ±25V
Drain current: 90A
Pulsed drain current: 572A
Power dissipation: 679W
Drain-source voltage: 650V
Kind of package: tube
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Case: ISOTOP
Technology: MDmesh™; MESH OVERLAY™; PowerMesh™
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH