Technische Details STE48NM60
Description: MOSFET N-CH 650V 48A ISOTOP, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: ISOTOP®, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 450W (Tc), Rds On (Max) @ Id, Vgs: 110mOhm @ 22.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Chassis Mount, Package / Case: ISOTOP.
Weitere Produktangebote STE48NM60
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STE48NM60 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 650V 48A ISOTOPPackaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 134 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: ISOTOP® Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 22.5A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Chassis Mount Package / Case: ISOTOP |
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