STF10NM60ND STMicroelectronics
auf Bestellung 956 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.82 EUR |
| 10+ | 2.31 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.80 EUR |
| 1000+ | 1.78 EUR |
| 2000+ | 1.71 EUR |
| 5000+ | 1.66 EUR |
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Technische Details STF10NM60ND STMicroelectronics
Description: MOSFET N-CH 600V 8A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V.
Weitere Produktangebote STF10NM60ND
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STF10NM60ND | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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| STF10NM60ND | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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| STF10NM60ND | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 70W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 20nC Pulsed drain current: 32A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STF10NM60ND | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 8A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 50 V |
Produkt ist nicht verfügbar |
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| STF10NM60ND | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 70W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 20nC Pulsed drain current: 32A |
Produkt ist nicht verfügbar |