STF10P6F6 STMicroelectronics

Description: MOSFET P-CH 60V 10A TO220FP, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 48 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.