
STF11N60M2-EP STMicroelectronics

Description: MOSFET N-CH 600V 7.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 595mOhm @ 3.75A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 100 V
auf Bestellung 978 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
7+ | 2.73 EUR |
10+ | 2.08 EUR |
100+ | 1.49 EUR |
500+ | 1.19 EUR |
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Technische Details STF11N60M2-EP STMicroelectronics
Description: MOSFET N-CH 600V 7.5A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 595mOhm @ 3.75A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 100 V.
Weitere Produktangebote STF11N60M2-EP nach Preis ab 1.09 EUR bis 3.19 EUR
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STF11N60M2-EP | Hersteller : STMicroelectronics |
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auf Bestellung 889 Stücke: Lieferzeit 10-14 Tag (e) |
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STF11N60M2-EP | Hersteller : STMicroelectronics |
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STF11N60M2-EP | Hersteller : STMicroelectronics |
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STF11N60M2-EP | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.5A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.595Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 12.4nC Pulsed drain current: 30A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STF11N60M2-EP | Hersteller : STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.5A; Idm: 30A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.5A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.595Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 12.4nC Pulsed drain current: 30A |
Produkt ist nicht verfügbar |