STF13N60DM2 STMicroelectronics
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.365Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 51 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
33+ | 2.17 EUR |
37+ | 1.96 EUR |
41+ | 1.76 EUR |
45+ | 1.6 EUR |
48+ | 1.52 EUR |
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Technische Details STF13N60DM2 STMicroelectronics
Description: MOSFET N-CH 600V 11A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 365mOhm @ 5.5A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 100 V.
Weitere Produktangebote STF13N60DM2 nach Preis ab 1.52 EUR bis 4.65 EUR
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STF13N60DM2 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 7A; Idm: 44A; 25W Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 44A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.365Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 51 Stücke: Lieferzeit 7-14 Tag (e) |
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STF13N60DM2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V 11A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 365mOhm @ 5.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 100 V |
auf Bestellung 293 Stücke: Lieferzeit 21-28 Tag (e) |
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STF13N60DM2 | Hersteller : STMicroelectronics | MOSFET N-channel 600 V, 0.310 Ohm typ 11 A MDmesh DM2 Power MOSFET |
auf Bestellung 975 Stücke: Lieferzeit 14-28 Tag (e) |
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STF13N60DM2 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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STF13N60DM2 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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STF13N60DM2 | Hersteller : STMicroelectronics | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |