| Anzahl | Preis |
|---|---|
| 1+ | 8.92 EUR |
| 10+ | 4.7 EUR |
| 100+ | 4.38 EUR |
| 500+ | 3.89 EUR |
| 1000+ | 3.43 EUR |
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Technische Details STF15NM65N STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220FP, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V.
Weitere Produktangebote STF15NM65N nach Preis ab 4.78 EUR bis 9.24 EUR
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STF15NM65N | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 650V 12A TO220FPCurrent - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 30W (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V |
auf Bestellung 83 Stücke: Lieferzeit 10-14 Tag (e) |
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| STF15NM65N | Hersteller : STMicroelectronics |
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auf Bestellung 70 Stücke: Lieferzeit 21-28 Tag (e) |