STF28N65M2 STMicroelectronics
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP package
| Anzahl | Preis |
|---|---|
| 1+ | 6.32 EUR |
| 10+ | 3.77 EUR |
| 100+ | 3.04 EUR |
| 500+ | 2.53 EUR |
| 1000+ | 2.34 EUR |
| 2000+ | 2.2 EUR |
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Technische Details STF28N65M2 STMicroelectronics
Description: MOSFET N-CH 650V 20A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V.
Weitere Produktangebote STF28N65M2 nach Preis ab 6.51 EUR bis 6.51 EUR
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STF28N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 80A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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| STF28N65M2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 6.51 EUR |


