STF30N10F7 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 100V 24A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 6+ | 3.06 EUR |
| 10+ | 2.75 EUR |
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Technische Details STF30N10F7 STMicroelectronics
Description: MOSFET N-CH 100V 24A TO220FP, Input Capacitance (Ciss) (Max) @ Vds: 1270 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220FP, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 24mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote STF30N10F7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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STF30N10F7 | Hersteller : STMicroelectronics |
MOSFET N-Ch 100V 0.02 Ohm typ 35A STripFET VII |
auf Bestellung 1977 Stücke: Lieferzeit 10-14 Tag (e) |