STF8N65M5 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N-CH 650V 7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
auf Bestellung 7 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 7.02 EUR |
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Technische Details STF8N65M5 STMicroelectronics
Description: MOSFET N-CH 650V 7A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V.
Weitere Produktangebote STF8N65M5 nach Preis ab 2.04 EUR bis 8.94 EUR
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STF8N65M5 | Hersteller : STMicroelectronics |
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auf Bestellung 11 Stücke: Lieferzeit 14-28 Tag (e) |
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STF8N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 4.4A; 25W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.4A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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STF8N65M5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 4.4A; 25W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.4A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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STF8N65M5 Produktcode: 116715 |
Transistoren > MOSFET N-CH |
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STF8N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 7A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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| STF8N65M5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH Si 650V 7A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |