STF8N90K5 STMicroelectronics
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Technische Details STF8N90K5 STMicroelectronics
Description: MOSFET N-CH 900V 8A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-220FP, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V.
Weitere Produktangebote STF8N90K5
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STF8N90K5 | Hersteller : STMicroelectronics |
 Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-220FP Tube |
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| STF8N90K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 8A; Idm: 32A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 8A Pulsed drain current: 32A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
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STF8N90K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 900V 8A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V |
Produkt ist nicht verfügbar |
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STF8N90K5 | Hersteller : STMicroelectronics |
MOSFETs N-channel 900 V, 0.60 Ohm typ 8 A MDmesh K5 Power MOSFET |
Produkt ist nicht verfügbar |
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| STF8N90K5 | Hersteller : STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 8A; Idm: 32A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 8A Pulsed drain current: 32A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |