STF9NM60N STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 3.92 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.72 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.22 EUR |
| 2000+ | 1.17 EUR |
| 5000+ | 1.11 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STF9NM60N STMicroelectronics
Description: MOSFET N-CH 600V 6.5A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 50 V.
Weitere Produktangebote STF9NM60N
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
STF9NM60N | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 600V 6.5A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 745mOhm @ 3.25A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 452 pF @ 50 V |
Produkt ist nicht verfügbar |