STFI10LN80K5 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 8A I2PAKFP
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I²Pak
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAKFP (TO-281)
Vgs(th) (Max) @ Id: 5V @ 100µA
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Technische Details STFI10LN80K5 STMicroelectronics
Description: MOSFET N-CH 800V 8A I2PAKFP, Power Dissipation (Max): 20W (Tc), Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Full Pack, I²Pak, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: I2PAKFP (TO-281), Vgs(th) (Max) @ Id: 5V @ 100µA.