Produkte > STMICROELECTRONICS > STFI10N62K3
STFI10N62K3

STFI10N62K3 STMicroelectronics

en.CD00232917.pdf
Hersteller: STMicroelectronics
Description: MOSFET N CH 620V 8.4A I2PAKFP
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 620 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-281 (I2PAKFP)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
FET Type: N-Channel
Package / Case: TO-262-3 Full Pack, I2PAK
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
auf Bestellung 1494 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.61 EUR
50+2.73 EUR
100+2.6 EUR
500+2.32 EUR
1000+2.2 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details STFI10N62K3 STMicroelectronics

Description: MOSFET N CH 620V 8.4A I2PAKFP, Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 620 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-281 (I2PAKFP), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Power Dissipation (Max): 30W (Tc), Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc), FET Type: N-Channel, Package / Case: TO-262-3 Full Pack, I2PAK, Packaging: Tube, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole.

Weitere Produktangebote STFI10N62K3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
STFI10N62K3 STFI10N62K3 Hersteller : STMicroelectronics en.CD00232917-1223128.pdf MOSFET N-Ch 620 V 0.68 Ohm 8.4 A SuperMESH3
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH