STFI11N60M2-EP STMicroelectronics

Description: MOSFET N-CH 600V I2PAK-FP, Packaging: Tube, Package / Case: TO-262-3 Full Pack, I2PAK, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Rds On (Max) @ Id, Vgs: 595mOhm @ 3.75A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4.75V @ 250µA, Supplier Device Package: I2PAKFP (TO-281), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 100 V.