STFI11NM65N STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET N CH 650V 11A I2PAKFP
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAKFP (TO-281)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Full Pack, I²Pak
Packaging: Tube
Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V
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Technische Details STFI11NM65N STMicroelectronics
Description: MOSFET N CH 650V 11A I2PAKFP, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: I2PAKFP (TO-281), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 25W (Tc), Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Full Pack, I²Pak, Packaging: Tube, Rds On (Max) @ Id, Vgs: 455mOhm @ 5.5A, 10V.