STFI15N95K5

STFI15N95K5 STMicroelectronics


en.DM00310488.pdf Hersteller: STMicroelectronics
Description: MOSFET N-CH 950V 7.5A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I²Pak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V
Power Dissipation (Max): 30W
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: I2PAKFP (TO-281)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
auf Bestellung 180 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.56 EUR
10+ 4.67 EUR
100+ 3.91 EUR
Mindestbestellmenge: 4
Produktrezensionen
Produktbewertung abgeben

Technische Details STFI15N95K5 STMicroelectronics

Description: MOSFET N-CH 950V 7.5A I2PAKFP, Packaging: Tube, Package / Case: TO-262-3 Full Pack, I²Pak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), Rds On (Max) @ Id, Vgs: 500mOhm @ 5.5A, 10V, Power Dissipation (Max): 30W, Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: I2PAKFP (TO-281), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 950 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V.

Weitere Produktangebote STFI15N95K5

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
STFI15N95K5 STFI15N95K5 Hersteller : STMicroelectronics en.DM00310488-1225093.pdf MOSFET POWER MOSFET
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)