STFI24N60M2 STMicroelectronics
auf Bestellung 1488 Stücke:
Lieferzeit 14-28 Tag (e)
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Technische Details STFI24N60M2 STMicroelectronics
Description: MOSFET N CH 600V 18A TO281, Packaging: Tube, Package / Case: TO-262-3 Full Pack, I2PAK, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V, Power Dissipation (Max): 30W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-281 (I2PAKFP), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V.
Weitere Produktangebote STFI24N60M2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STFI24N60M2 | Hersteller : STMicroelectronics |
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auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) |
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STFI24N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) I2PAKFP Tube |
Produkt ist nicht verfügbar |
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STFI24N60M2 | Hersteller : STMicroelectronics |
Description: MOSFET N CH 600V 18A TO281 Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V |
Produkt ist nicht verfügbar |