STFI34NM60N

STFI34NM60N STMicroelectronics


1520358380687461dm000.pdf Hersteller: STMicroelectronics
Trans MOSFET N-CH 600V 31.5A 3-Pin(3+Tab) I2PAKFP Tube
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Technische Details STFI34NM60N STMicroelectronics

Description: MOSFET N-CH 600V 29A I2PAKFP, Packaging: Tube, Package / Case: TO-262-3 Full Pack, I2PAK, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-281 (I2PAKFP), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V.

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STFI34NM60N Hersteller : STMicroelectronics 1520358380687461dm000.pdf Trans MOSFET N-CH 600V 31.5A 3-Pin(3+Tab) I2PAKFP Tube
Produkt ist nicht verfügbar
STFI34NM60N STFI34NM60N Hersteller : STMicroelectronics STFI34NM60N.pdf Description: MOSFET N-CH 600V 29A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 14.5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2722 pF @ 100 V
Produkt ist nicht verfügbar