STFI4N62K3 STMicroelectronics
Hersteller: STMicroelectronicsDescription: MOSFET N CH 620V 3.8A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V
auf Bestellung 1409 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 2.04 EUR |
| 100+ | 1.81 EUR |
| 500+ | 1.6 EUR |
| 1000+ | 1.52 EUR |
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Technische Details STFI4N62K3 STMicroelectronics
Description: MOSFET N CH 620V 3.8A I2PAKFP, Packaging: Tube, Package / Case: TO-262-3 Full Pack, I2PAK, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-281 (I2PAKFP), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| STFI4N62K3 | Hersteller : STMicroelectronics |
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auf Bestellung 31 Stücke: Lieferzeit 21-28 Tag (e) |
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STFI4N62K3 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 620V 3.8A 3-Pin(3+Tab) I2PAKFP Tube |
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