STFI4N62K3 STMicroelectronics

Description: MOSFET N CH 620V 3.8A I2PAKFP, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 620 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-281 (I2PAKFP), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Full Pack, I2PAK, Packaging: Tube.