STFU18N60M2 STMicroelectronics
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Technische Details STFU18N60M2 STMicroelectronics
Description: MOSFET N-CH 600V TO-220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V, Power Dissipation (Max): 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220FP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V.
Weitere Produktangebote STFU18N60M2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| STFU18N60M2 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220FP Tube |
Produkt ist nicht verfügbar |
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| STFU18N60M2 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 600V TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 791 pF @ 100 V |
Produkt ist nicht verfügbar |
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STFU18N60M2 | Hersteller : STMicroelectronics |
MOSFETs N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra |
Produkt ist nicht verfügbar |

