STFW45N65M5

STFW45N65M5 STMicroelectronics


stw45n65m5-1852090.pdf Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.067 Ohm typ 35 A, MDmesh M5 Power MOSFET in TO-3PF package
auf Bestellung 299 Stücke:

Lieferzeit 378-392 Tag (e)
Anzahl Preis ohne MwSt
3+19.89 EUR
10+ 18.54 EUR
100+ 16.38 EUR
300+ 15.91 EUR
Mindestbestellmenge: 3
Produktrezensionen
Produktbewertung abgeben

Technische Details STFW45N65M5 STMicroelectronics

Description: MOSFET N-CH 650V 35A ISOWATT, Packaging: Tube, Package / Case: TO-3P-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V, Power Dissipation (Max): 57W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-3PF, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V.

Weitere Produktangebote STFW45N65M5

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
STFW45N65M5 STFW45N65M5 Hersteller : STMicroelectronics 813816702285640dm00072250.pdf Trans MOSFET N-CH 650V 35A 3-Pin(3+Tab) TO-3PF Tube
Produkt ist nicht verfügbar
STFW45N65M5 Hersteller : STMicroelectronics 813816702285640dm00072250.pdf Trans MOSFET N-CH 650V 35A 3-Pin(3+Tab) TO-3PF Tube
Produkt ist nicht verfügbar
STFW45N65M5 STFW45N65M5 Hersteller : STMicroelectronics en.DM00072250.pdf Description: MOSFET N-CH 650V 35A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 17.5A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 100 V
Produkt ist nicht verfügbar